auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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232+ | 0.67 EUR |
253+ | 0.59 EUR |
260+ | 0.55 EUR |
500+ | 0.51 EUR |
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Technische Details SI2314EDS-T1-E3 Vishay
Description: MOSFET N-CH 20V 3.77A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V.
Weitere Produktangebote SI2314EDS-T1-E3 nach Preis ab 0.63 EUR bis 1.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2314EDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 3.77A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
auf Bestellung 99000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2314EDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 3.77A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
auf Bestellung 104013 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2314EDS-T1-E3 | Hersteller : Vishay / Siliconix | MOSFET N-CHANNEL 20-V (D-S) MOSFET |
auf Bestellung 59836 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2314EDS-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2314EDS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2314EDS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2314EDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 15A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI2314EDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 15A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |