SI2316BDS-T1-E3 Vishay Semiconductors

Description: MOSFET N-CH 30V 4.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V, Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V.