SI2316BDS-T1-GE3

SI2316BDS-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
si2316bd.pdf si2316bd.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 6000 Stücke
Lieferzeit 14-21 Tag (e)

3000+ 0.33 EUR

Technische Details SI2316BDS-T1-GE3

Description: MOSFET N-CH 30V 4.5A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Drain to Source Voltage (Vdss): 30V, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: SOT-23-3 (TO-236), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc).

Preis SI2316BDS-T1-GE3 ab 0.33 EUR bis 0.68 EUR

SI2316BDS-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
si2316bd.pdf si2316bd.pdf
auf Bestellung 2911 Stücke
Lieferzeit 14-21 Tag (e)
239+ 0.68 EUR
242+ 0.65 EUR
244+ 0.62 EUR
266+ 0.55 EUR
269+ 0.52 EUR
500+ 0.41 EUR
1000+ 0.36 EUR
SI2316BDS-T1-GE3
SI2316BDS-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R
si2316bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2316BDS-T1-GE3
SI2316BDS-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V 4.5A 1.66W 50mohm @ 10V
VISH_S_A0010924762_1-2571466.pdf
auf Bestellung 43197 Stücke
Lieferzeit 14-28 Tag (e)
SI2316BDS-T1-GE3
SI2316BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
si2316bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2316BDS-T1-GE3
SI2316BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
si2316bd.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2316BDS-T1-GE3
SI2316BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
si2316bd.pdf
auf Bestellung 66528 Stücke
Lieferzeit 21-28 Tag (e)