auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
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Technische Details SI2316BDS-T1-GE3 Vishay
Description: MOSFET N-CH 30V 4.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V, Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V.
Weitere Produktangebote SI2316BDS-T1-GE3 nach Preis ab 0.3 EUR bis 1.3 EUR
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SI2316BDS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V |
auf Bestellung 61123 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 4.5A 1.66W 50mohm @ 10V |
auf Bestellung 17394 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2316BDS-T1-GE3 | Hersteller : VISHAY |
SI2316BDS-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |