auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
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Technische Details SI2316BDS-T1-GE3 Vishay
Description: MOSFET N-CH 30V 4.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V, Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V.
Weitere Produktangebote SI2316BDS-T1-GE3 nach Preis ab 0.33 EUR bis 1.44 EUR
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SI2316BDS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V |
auf Bestellung 54000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V |
auf Bestellung 61123 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 4.5A 1.66W 50mohm @ 10V |
auf Bestellung 68193 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2316BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.9A 3-Pin SOT-23 T/R |
auf Bestellung 175 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2316BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 20A Power dissipation: 1.66W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI2316BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 20A Power dissipation: 1.66W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |