SI2316DS-T1-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.4A
Pulsed drain current: 16A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
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Technische Details SI2316DS-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 3.4A, Pulsed drain current: 16A, Power dissipation: 0.96W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 85mΩ, Mounting: SMD, Gate charge: 7nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.
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| SI2316DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.4A Pulsed drain current: 16A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |