auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.26 EUR |
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Technische Details SI2318DS-T1-E3 Vishay
Description: MOSFET N-CH 40V 3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V.
Weitere Produktangebote SI2318DS-T1-E3 nach Preis ab 0.35 EUR bis 1.23 EUR
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SI2318DS-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 40V 3A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
auf Bestellung 30576 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2318DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
auf Bestellung 30576 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2318DS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 40V 6A |
auf Bestellung 248022 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2318DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2318DS-T1-E3 | Hersteller : Vishay |
Transistor N-Channel MOSFET; 40V; 20V; 58mOhm; 3A; 750mW; -55°C ~ 150°C; SI2318DS-T1-GE3 SI2318DS TSI2318ds Anzahl je Verpackung: 50 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2318DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2318DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2318DS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 0.75W Polarisation: unipolar Gate charge: 10nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 16A Drain-source voltage: 40V Drain current: 3A On-state resistance: 58mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2318DS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 0.75W Polarisation: unipolar Gate charge: 10nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 16A Drain-source voltage: 40V Drain current: 3A On-state resistance: 58mΩ |
Produkt ist nicht verfügbar |