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SI2319DS-T1-BE3

SI2319DS-T1-BE3 Vishay Siliconix

si2319ds.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.62 EUR
6000+ 0.59 EUR
Mindestbestellmenge: 3000
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Technische Details SI2319DS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 40-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V.

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SI2319DS-T1-BE3 SI2319DS-T1-BE3 Hersteller : Vishay Siliconix si2319ds.pdf Description: P-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
auf Bestellung 7598 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.64 EUR
19+ 1.42 EUR
100+ 0.98 EUR
500+ 0.82 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 16
SI2319DS-T1-BE3 SI2319DS-T1-BE3 Hersteller : Vishay / Siliconix si2319ds.pdf MOSFET P-CHANNEL 40-V (D-S)
auf Bestellung 57995 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
30+1.74 EUR
34+ 1.53 EUR
100+ 1.05 EUR
500+ 0.87 EUR
1000+ 0.76 EUR
3000+ 0.64 EUR
Mindestbestellmenge: 30
SI2319DS-T1-BE3 SI2319DS-T1-BE3 Hersteller : Vishay si2319ds.pdf Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R
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