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SI2319DS-T1-GE3

SI2319DS-T1-GE3 Vishay Siliconix


si2319ds.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.66 EUR
6000+ 0.62 EUR
Mindestbestellmenge: 3000
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Technische Details SI2319DS-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 40V 2.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V.

Weitere Produktangebote SI2319DS-T1-GE3 nach Preis ab 0.41 EUR bis 1.72 EUR

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SI2319DS-T1-GE3 SI2319DS-T1-GE3 Hersteller : VISHAY si2319ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
96+ 0.75 EUR
123+ 0.58 EUR
161+ 0.45 EUR
170+ 0.42 EUR
3000+ 0.41 EUR
Mindestbestellmenge: 81
SI2319DS-T1-GE3 SI2319DS-T1-GE3 Hersteller : VISHAY si2319ds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
96+ 0.75 EUR
123+ 0.58 EUR
161+ 0.45 EUR
170+ 0.42 EUR
3000+ 0.41 EUR
Mindestbestellmenge: 81
SI2319DS-T1-GE3 SI2319DS-T1-GE3 Hersteller : Vishay / Siliconix si2319ds.pdf MOSFET 40V 3.0A 1.25W 82mohm @ 10V
auf Bestellung 643544 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
36+1.45 EUR
41+ 1.29 EUR
100+ 0.99 EUR
500+ 0.85 EUR
1000+ 0.74 EUR
3000+ 0.67 EUR
6000+ 0.63 EUR
Mindestbestellmenge: 36
SI2319DS-T1-GE3 SI2319DS-T1-GE3 Hersteller : Vishay Siliconix si2319ds.pdf Description: MOSFET P-CH 40V 2.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
auf Bestellung 6959 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.5 EUR
100+ 1.04 EUR
500+ 0.87 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 16
SI2319DS-T1-GE3 SI2319DS-T1-GE3 Hersteller : Vishay si2319ds.pdf Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
SI2319DS-T1-GE3 SI2319DS-T1-GE3 Hersteller : Vishay 72315.pdf Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar