auf Bestellung 35297 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 191+ | 0.77 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.57 EUR |
| 5000+ | 0.53 EUR |
| 10000+ | 0.5 EUR |
| 25000+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2323DS-T1-E3 Vishay
Description: MOSFET P-CH 20V 3.7A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V.
Weitere Produktangebote SI2323DS-T1-E3 nach Preis ab 0.53 EUR bis 2.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2323DS-T1-E3 | Hersteller : Vishay Semiconductors |
 MOSFETs 20V 3.7A 0.039Ohm |
auf Bestellung 54862 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2323DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R |
auf Bestellung 3604 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2323DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2323DS-T1-E3 | Hersteller : Vishay Siliconix |
MOSFET P-Ch, 20V, 3.7A, SOT-23-3 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2323DS-T1-E3 Produktcode: 207640
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Lieblingsprodukt
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Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SI2323DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2323DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI2323DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
Produkt ist nicht verfügbar |