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SI2323DS-T1-GE3

SI2323DS-T1-GE3 Vishay Siliconix


si2323ds.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
auf Bestellung 21000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.64 EUR
6000+ 0.61 EUR
9000+ 0.57 EUR
Mindestbestellmenge: 3000
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Technische Details SI2323DS-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 3.7A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V.

Weitere Produktangebote SI2323DS-T1-GE3 nach Preis ab 0.44 EUR bis 2.25 EUR

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SI2323DS-T1-GE3 SI2323DS-T1-GE3 Hersteller : VISHAY SI2323DS-T1-E3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2050 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
76+ 0.95 EUR
85+ 0.85 EUR
153+ 0.47 EUR
162+ 0.44 EUR
Mindestbestellmenge: 59
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Hersteller : VISHAY SI2323DS-T1-E3.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Pulsed drain current: -20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
76+ 0.95 EUR
85+ 0.85 EUR
153+ 0.47 EUR
162+ 0.44 EUR
Mindestbestellmenge: 59
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Hersteller : Vishay Siliconix si2323ds.pdf Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
auf Bestellung 21160 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.47 EUR
100+ 1.02 EUR
500+ 0.85 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 16
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Hersteller : Vishay Semiconductors si2323ds.pdf MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
auf Bestellung 163950 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.25 EUR
27+ 1.98 EUR
100+ 1.35 EUR
500+ 1.13 EUR
1000+ 0.96 EUR
3000+ 0.77 EUR
Mindestbestellmenge: 24
SI2323DS-T1-GE3 Hersteller : Siliconix si2323ds.pdf P-MOSFET 20V 3.7A 39mΩ SI2323DS-T1-GE3 SI2323DS-T1-E3 Vishay TSI2323ds
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
SI2323DS-T1-GE3 Hersteller : Vishay 72024.pdf Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Hersteller : Vishay 72024.pdf Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Hersteller : Vishay si2323ds.pdf Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar