Produkte > VISHAY SILICONIX > SI2324DS-T1-BE3
SI2324DS-T1-BE3

SI2324DS-T1-BE3 Vishay Siliconix


si2324ds.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.51 EUR
6000+ 0.49 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI2324DS-T1-BE3 Vishay Siliconix

Description: MOSFET N-CH 100V 2.3A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc), Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V.

Weitere Produktangebote SI2324DS-T1-BE3 nach Preis ab 0.44 EUR bis 1.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI2324DS-T1-BE3 SI2324DS-T1-BE3 Hersteller : Vishay / Siliconix si2324ds.pdf MOSFET N-CHANNEL 100V (D-S)
auf Bestellung 8786 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.5 EUR
41+ 1.28 EUR
100+ 0.89 EUR
500+ 0.69 EUR
1000+ 0.57 EUR
3000+ 0.48 EUR
9000+ 0.44 EUR
Mindestbestellmenge: 35
SI2324DS-T1-BE3 SI2324DS-T1-BE3 Hersteller : Vishay Siliconix si2324ds.pdf Description: MOSFET N-CH 100V 2.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
auf Bestellung 10042 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.3 EUR
100+ 0.9 EUR
500+ 0.71 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 17