auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.74 EUR |
| 6000+ | 0.65 EUR |
| 12000+ | 0.59 EUR |
| 18000+ | 0.53 EUR |
Produktrezensionen
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Technische Details SI2333DS-T1-E3 Vishay
Description: MOSFET P-CH 12V 4.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V.
Weitere Produktangebote SI2333DS-T1-E3 nach Preis ab 0.66 EUR bis 2.01 EUR
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SI2333DS-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 12V 4.1A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V |
auf Bestellung 39854 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2333DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 4.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V |
auf Bestellung 42392 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2333DS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V |
auf Bestellung 139080 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2333DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2333DS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A Mounting: SMD Polarisation: unipolar Case: SOT23 Pulsed drain current: -20A Power dissipation: 1.25W Gate charge: 18nC Technology: TrenchFET® Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 59mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI2333DS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A Mounting: SMD Polarisation: unipolar Case: SOT23 Pulsed drain current: -20A Power dissipation: 1.25W Gate charge: 18nC Technology: TrenchFET® Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 59mΩ |
Produkt ist nicht verfügbar |