SI2333DS-T1-GE3 Vishay Semiconductors
auf Bestellung 7413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.06 EUR |
| 10+ | 1.33 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.84 EUR |
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Technische Details SI2333DS-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 12V 4.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V.
Weitere Produktangebote SI2333DS-T1-GE3 nach Preis ab 0.89 EUR bis 2.11 EUR
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SI2333DS-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 12V 4.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V |
auf Bestellung 474 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2333DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R |
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SI2333DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2333DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.3A Pulsed drain current: -20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 59mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2333DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 4.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V |
Produkt ist nicht verfügbar |
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| SI2333DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.3A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.3A Pulsed drain current: -20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 59mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |