SI2335DS-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
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Technische Details SI2335DS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 12V 3.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V.