SI2343DS-T1-E3

SI2343DS-T1-E3

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Technische Details SI2343DS-T1-E3

Description: MOSFET P-CH 30V 3.1A SOT23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 750mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix, Base Part Number: SI2343, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: SOT-23-3 (TO-236), Mounting Type: Surface Mount.

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SI2343DS-T1-E3
Hersteller: VISHAY

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SI2343DS-T1-E3
SI2343DS-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 30V 4.0A 1.25W 53 mohms @ 10V
VISH_S_A0010924639_1-2571407.pdf
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Lieferzeit 14-28 Tag (e)
SI2343DS-T1-E3
Hersteller: Vishay
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R
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Lieferzeit 14-21 Tag (e)
SI2343DS-T1-E3
Hersteller: Vishay
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R
72079.pdf 72079.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2343DS-T1-E3
SI2343DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2343
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
72079.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2343DS-T1-E3
SI2343DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
72079.pdf
auf Bestellung 2716 Stücke
Lieferzeit 21-28 Tag (e)
SI2343DS-T1-E3
SI2343DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Base Part Number: SI2343
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
72079.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen