SI2365EDS-T1-GE3 Vishay Semiconductors
auf Bestellung 143541 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 0.97 EUR |
| 78+ | 0.67 EUR |
| 143+ | 0.36 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.21 EUR |
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Technische Details SI2365EDS-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 5.9A TO236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V.
Weitere Produktangebote SI2365EDS-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2365EDS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2365EDS-T1-GE3 Produktcode: 166536 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SI2365EDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 5.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2365EDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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SI2365EDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 5.9A TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V |
Produkt ist nicht verfügbar |
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SI2365EDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 5.9A TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V |
Produkt ist nicht verfügbar |
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SI2365EDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 32mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |