auf Bestellung 101837 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.19 EUR |
| 52+ | 1.01 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.44 EUR |
| 9000+ | 0.42 EUR |
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Technische Details SI3407DV-T1-BE3 Vishay / Siliconix
Description: MOSFET P-CH 20V 7.5A/8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V, Power Dissipation (Max): 2W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V.
Weitere Produktangebote SI3407DV-T1-BE3 nach Preis ab 0.51 EUR bis 1.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI3407DV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 7.5A/8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V |
auf Bestellung 1667 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI3407DV-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -25A Power dissipation: 4.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 32.7mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI3407DV-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3407DV-T1-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3407DV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 7.5A/8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V |
Produkt ist nicht verfügbar |
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| SI3407DV-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -25A Power dissipation: 4.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 32.7mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |