Si3430DV-T1-GE3 Vishay / Siliconix
auf Bestellung 2980 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 2.91 EUR |
| 22+ | 2.37 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.28 EUR |
| 3000+ | 1.19 EUR |
| 6000+ | 1.14 EUR |
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Technische Details Si3430DV-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 1.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V.
Weitere Produktangebote Si3430DV-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| Si3430DV-T1-GE3 |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3430DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| Si3430DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 8A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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Si3430DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V |
Produkt ist nicht verfügbar |
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Si3430DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V |
Produkt ist nicht verfügbar |
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| Si3430DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 8A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |