SI3433BDV-T1-GE3

SI3433BDV-T1-GE3

SI3433BDV-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide

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Technische Details SI3433BDV-T1-GE3

Description: MOSFET P-CH 20V 4.3A 6-TSOP, Supplier Device Package: 6-TSOP, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.1W, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, Vgs(th) (Max) @ Id: 850mV @ 250µA, Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Drain to Source Voltage (Vdss): 20V, FET Type: MOSFET P-Channel, Metal Oxide.

Preis SI3433BDV-T1-GE3 ab 0 EUR bis 0 EUR