SI3434DV-T1-GE3

SI3434DV-T1-GE3

SI3434DV-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.6A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1mA (Min)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs (Max): ±12V
Power Dissipation (Max): 1.14W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

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Technische Details SI3434DV-T1-GE3

Description: MOSFET N-CH 30V 4.6A 6-TSOP, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, Vgs(th) (Max) @ Id: 600mV @ 1mA (Min), Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Tape & Reel (TR), Vgs (Max): ±12V, Power Dissipation (Max): 1.14W (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 6-TSOP, Package / Case: SOT-23-6 Thin, TSOT-23-6.

Preis SI3434DV-T1-GE3 ab 0 EUR bis 0 EUR