auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.88 EUR |
| 180+ | 0.85 EUR |
| 204+ | 0.72 EUR |
| 250+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3438DV-T1-GE3 Vishay
Description: MOSFET N-CH 40V 7.4A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 3.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V.
Weitere Produktangebote SI3438DV-T1-GE3 nach Preis ab 0.56 EUR bis 2.57 EUR
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SI3438DV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 5.5A 6-Pin TSOP T/R |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3438DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 7.4A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3438DV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 40V Vds 20V Vgs TSOP-6 |
auf Bestellung 41061 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3438DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 7.4A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 20 V |
auf Bestellung 15480 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3438DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 5.5A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3438DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI3438DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |