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SI3442BDV-T1-BE3

SI3442BDV-T1-BE3 Vishay / Siliconix

si3442bd.pdf Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 2.5-V (G-S)
auf Bestellung 13166 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
38+1.38 EUR
44+ 1.21 EUR
100+ 0.82 EUR
500+ 0.7 EUR
3000+ 0.6 EUR
6000+ 0.59 EUR
9000+ 0.56 EUR
Mindestbestellmenge: 38
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Technische Details SI3442BDV-T1-BE3 Vishay / Siliconix

Description: N-CHANNEL 2.5-V (G-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V.

Weitere Produktangebote SI3442BDV-T1-BE3 nach Preis ab 0.66 EUR bis 1.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI3442BDV-T1-BE3 SI3442BDV-T1-BE3 Hersteller : Vishay Siliconix si3442bd.pdf Description: N-CHANNEL 2.5-V (G-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
auf Bestellung 1617 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.35 EUR
100+ 1.04 EUR
500+ 0.82 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SI3442BDV-T1-BE3 SI3442BDV-T1-BE3 Hersteller : Vishay Siliconix si3442bd.pdf Description: N-CHANNEL 2.5-V (G-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
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