Technische Details SI3442BDV-T1-GE3
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A, Technology: TrenchFET®, Mounting: SMD, Case: TSOP6, Kind of package: reel; tape, Drain current: 4.2A, On-state resistance: 90mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.67W, Polarisation: unipolar, Gate charge: 5nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 20A, Drain-source voltage: 20V, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI3442BDV-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI3442BDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Technology: TrenchFET® Mounting: SMD Case: TSOP6 Kind of package: reel; tape Drain current: 4.2A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 1.67W Polarisation: unipolar Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Drain-source voltage: 20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3442BDV-T1-GE3 | Hersteller : Vishay Siliconix | Description: MOSFET N-CH 20V 3A 6-TSOP |
Produkt ist nicht verfügbar |
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SI3442BDV-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET 20V 4.2A 1.67W 57mohm @ 4.5V |
Produkt ist nicht verfügbar |
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SI3442BDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Technology: TrenchFET® Mounting: SMD Case: TSOP6 Kind of package: reel; tape Drain current: 4.2A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 1.67W Polarisation: unipolar Gate charge: 5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Drain-source voltage: 20V |
Produkt ist nicht verfügbar |