auf Bestellung 574 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 350+ | 0.45 EUR |
| 352+ | 0.43 EUR |
| 407+ | 0.36 EUR |
| 409+ | 0.34 EUR |
| 533+ | 0.25 EUR |
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Technische Details SI3457CDV-T1-E3 Vishay
Description: MOSFET P-CH 30V 5.1A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V.
Weitere Produktangebote SI3457CDV-T1-E3 nach Preis ab 0.23 EUR bis 1.48 EUR
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SI3457CDV-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 4.1A 6-Pin TSOP T/R |
auf Bestellung 574 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3457CDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.1A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3457CDV-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFET -30V Vds 20V Vgs TSOP-6 |
auf Bestellung 82171 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3457CDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.1A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V |
auf Bestellung 8080 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI3457CDV-T1-E3 |
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auf Bestellung 396 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3457CDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.1A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3457CDV-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 113mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI3457CDV-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.1A Pulsed drain current: -20A Power dissipation: 3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 113mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |