SI3458BDV-T1-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 3.2A/4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 2495 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 2.08 EUR |
| 15+ | 1.81 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.89 EUR |
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Technische Details SI3458BDV-T1-BE3 Vishay Siliconix
Description: MOSFET N-CH 60V 3.2A/4.1A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V, Power Dissipation (Max): 2W (Ta), 3.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V.
Weitere Produktangebote SI3458BDV-T1-BE3 nach Preis ab 0.75 EUR bis 2.1 EUR
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SI3458BDV-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFET 60V N-CHANNEL (D-S) |
auf Bestellung 40336 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3458BDV-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R |
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| SI3458BDV-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R |
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| SI3458BDV-T1-BE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 10A Power dissipation: 3.3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 128mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3458BDV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 3.2A/4.1A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 4.1A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
Produkt ist nicht verfügbar |
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| SI3458BDV-T1-BE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 10A Power dissipation: 3.3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 128mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |