auf Bestellung 952 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 230+ | 0.69 EUR |
| 231+ | 0.66 EUR |
| 275+ | 0.53 EUR |
| 276+ | 0.51 EUR |
| 500+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3458BDV-T1-GE3 Vishay
Description: MOSFET N-CH 60V 4.1A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V, Power Dissipation (Max): 2W (Ta), 3.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V.
Weitere Produktangebote SI3458BDV-T1-GE3 nach Preis ab 0.38 EUR bis 2.08 EUR
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SI3458BDV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R |
auf Bestellung 952 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3458BDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 4.1A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3458BDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 2.1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2670 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3458BDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 2.1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2670 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3458BDV-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 60V 4.1A 3.3W 100mohm @ 10V |
auf Bestellung 222476 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3458BDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 4.1A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 34115 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3458BDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3458BDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |