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SI3460BDV-T1-GE3

SI3460BDV-T1-GE3 Vishay Siliconix


si3460bd.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.79 EUR
Mindestbestellmenge: 3000
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Technische Details SI3460BDV-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 20V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V, Power Dissipation (Max): 2W (Ta), 3.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V.

Weitere Produktangebote SI3460BDV-T1-GE3 nach Preis ab 0.89 EUR bis 2.08 EUR

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SI3460BDV-T1-GE3 SI3460BDV-T1-GE3 Hersteller : Vishay Siliconix si3460bd.pdf Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
SI3460BDV-T1-GE3 SI3460BDV-T1-GE3 Hersteller : Vishay si3460bd.pdf Trans MOSFET N-CH 20V 6.7A 6-Pin TSOP T/R
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SI3460BDV-T1-GE3 SI3460BDV-T1-GE3 Hersteller : Vishay Semiconductors si3460bd.pdf MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V
Produkt ist nicht verfügbar