auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.25 EUR |
Produktrezensionen
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Technische Details SI3476DV-T1-GE3 Vishay
Description: MOSFET N-CH 80V 4.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V, Power Dissipation (Max): 2W (Ta), 3.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V.
Weitere Produktangebote SI3476DV-T1-GE3 nach Preis ab 0.25 EUR bis 1.28 EUR
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SI3476DV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 80V 4.6A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3476DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 80V 4.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3476DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 80V 4.6A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V |
auf Bestellung 16511 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3476DV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 80V Vds 20V Vgs TSOP-6 |
auf Bestellung 117493 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3476DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 4.6A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3476DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 4.6A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3476DV-T1-GE3 | Hersteller : VISHAY |
SI3476DV-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |