SI3481DV-T1-GE3

SI3481DV-T1-GE3

SI3481DV-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide

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Technische Details SI3481DV-T1-GE3

Description: MOSFET P-CH 30V 4A 6-TSOP, Supplier Device Package: 6-TSOP, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.14W, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Rds On (Max) @ Id, Vgs: 48 mOhm @ 5.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET P-Channel, Metal Oxide.

Preis SI3481DV-T1-GE3 ab 0 EUR bis 0 EUR