SI3483CDV-T1-E3

SI3483CDV-T1-E3

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Technische Details SI3483CDV-T1-E3

Description: MOSFET P-CH 30V 8A 6-TSOP, Supplier Device Package: 6-TSOP, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET P-Channel, Metal Oxide, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 4.2W, Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc).

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SI3483CDV-T1-E3
SI3483CDV-T1-E3
Hersteller: Vishay / Siliconix
MOSFET -30V Vds 20V Vgs TSOP-6
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SI3483CDV-T1-E3
SI3483CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.2W
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
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