SI3493BDV-T1-E3

SI3493BDV-T1-E3

Hersteller: VISHAY
09+ SOP8
si3493bdv.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
5000 Stücke

Technische Details SI3493BDV-T1-E3

Description: MOSFET P-CH 20V 8A 6-TSOP, Technology: MOSFET (Metal Oxide), Base Part Number: SI3493, Package / Case: SOT-23-6 Thin, TSOT-23-6, Supplier Device Package: 6-TSOP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drain to Source Voltage (Vdss): 20V.

Preis SI3493BDV-T1-E3 ab 0 EUR bis 0 EUR

SI3493BDV-T1-E3
Hersteller:

si3493bdv.pdf
3000 Stücke
SI3493BDV-T1-E3
Hersteller: Vishay
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R
si3493bdv.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3493BDV-T1-E3
Hersteller: Vishay
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R
si3493bdv.pdf
auf Bestellung 5 Stücke
Lieferzeit 14-21 Tag (e)
SI3493BDV-T1-E3
SI3493BDV-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V
si3493bdv-1766344.pdf
auf Bestellung 2392 Stücke
Lieferzeit 14-28 Tag (e)
SI3493BDV-T1-E3
SI3493BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Base Part Number: SI3493
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
si3493bdv.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3493BDV-T1-E3
SI3493BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6-TSOP
Technology: MOSFET (Metal Oxide)
Base Part Number: SI3493
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
si3493bdv.pdf
auf Bestellung 21123 Stücke
Lieferzeit 21-28 Tag (e)
SI3493BDV-T1-E3
SI3493BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V
Vgs (Max): ±8V
Base Part Number: SI3493
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
si3493bdv.pdf
auf Bestellung 1122 Stücke
Lieferzeit 21-28 Tag (e)