auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3493BDV-T1-GE3 Vishay
Description: MOSFET P-CH 20V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V, Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V.
Weitere Produktangebote SI3493BDV-T1-GE3 nach Preis ab 0.52 EUR bis 2.18 EUR
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SI3493BDV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3493BDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3493BDV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V |
auf Bestellung 10041 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3493BDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V |
auf Bestellung 15569 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3493BDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI3493BDV-T1-GE3 |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3493BDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3493BDV-T1-GE3 | Hersteller : VISHAY |
SI3493BDV-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |