SI3493DV-T1-GE3

SI3493DV-T1-GE3

SI3493DV-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

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Technische Details SI3493DV-T1-GE3

Description: MOSFET P-CH 20V 5.3A 6-TSOP, Packaging: Tape & Reel (TR), Part Status: Obsolete, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V, Vgs (Max): ±8V, Power Dissipation (Max): 1.1W (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: 6-TSOP, Package / Case: SOT-23-6 Thin, TSOT-23-6.

Preis SI3493DV-T1-GE3 ab 0 EUR bis 0 EUR