SI3495DV-T1-GE3

SI3495DV-T1-GE3

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Technische Details SI3495DV-T1-GE3

Description: MOSFET P-CH 20V 5.3A 6-TSOP, FET Type: MOSFET P-Channel, Metal Oxide, Supplier Device Package: 6-TSOP, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.1W, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V, Vgs(th) (Max) @ Id: 750mV @ 250µA, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Drain to Source Voltage (Vdss): 20V.

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SI3495DV-T1-GE3
SI3495DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Vgs(th) (Max) @ Id: 750mV @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 20V
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