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SI3552DV-T1-GE3

SI3552DV-T1-GE3 Vishay


si3552dv.pdf Hersteller: Vishay
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R
auf Bestellung 4885 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
159+0.97 EUR
161+ 0.93 EUR
162+ 0.89 EUR
208+ 0.67 EUR
250+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.38 EUR
3000+ 0.33 EUR
Mindestbestellmenge: 159
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Technische Details SI3552DV-T1-GE3 Vishay

Description: MOSFET N/P-CH 30V 2.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 6-TSOP, Part Status: Active.

Weitere Produktangebote SI3552DV-T1-GE3 nach Preis ab 0.33 EUR bis 1.93 EUR

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SI3552DV-T1-GE3 SI3552DV-T1-GE3 Hersteller : Vishay si3552dv.pdf Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R
auf Bestellung 4885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
141+1.1 EUR
159+ 0.94 EUR
161+ 0.9 EUR
162+ 0.85 EUR
208+ 0.64 EUR
250+ 0.61 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
3000+ 0.33 EUR
Mindestbestellmenge: 141
Si3552DV-T1-GE3 Si3552DV-T1-GE3 Hersteller : Vishay Siliconix si3552dv.pdf Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 2388 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.9 EUR
16+ 1.63 EUR
100+ 1.13 EUR
500+ 0.95 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 14
Si3552DV-T1-GE3 Si3552DV-T1-GE3 Hersteller : Vishay Semiconductors si3552dv.pdf MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR
auf Bestellung 48949 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
27+1.93 EUR
31+ 1.69 EUR
100+ 1.29 EUR
500+ 1.03 EUR
1000+ 0.82 EUR
3000+ 0.74 EUR
6000+ 0.71 EUR
Mindestbestellmenge: 27
Si3552DV-T1-GE3 si3552dv.pdf
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
SI3552DV-T1-GE3 SI3552DV-T1-GE3 Hersteller : Vishay si3552dv.pdf Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R
Produkt ist nicht verfügbar
Si3552DV-T1-GE3 Hersteller : VISHAY si3552dv.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -30/30V; -1.8/2.5A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -7...8A
Power dissipation: 1.15W
Gate charge: 3.6/3.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -1.8/2.5A
Kind of channel: enhanced
Drain-source voltage: -30/30V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 360/175mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Si3552DV-T1-GE3 Si3552DV-T1-GE3 Hersteller : Vishay Siliconix si3552dv.pdf Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Part Status: Active
Produkt ist nicht verfügbar
Si3552DV-T1-GE3 Hersteller : VISHAY si3552dv.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -30/30V; -1.8/2.5A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -7...8A
Power dissipation: 1.15W
Gate charge: 3.6/3.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -1.8/2.5A
Kind of channel: enhanced
Drain-source voltage: -30/30V
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20V
Case: TSOP6
On-state resistance: 360/175mΩ
Produkt ist nicht verfügbar