auf Bestellung 4885 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
159+ | 0.97 EUR |
161+ | 0.93 EUR |
162+ | 0.89 EUR |
208+ | 0.67 EUR |
250+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.38 EUR |
3000+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3552DV-T1-GE3 Vishay
Description: MOSFET N/P-CH 30V 2.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 6-TSOP, Part Status: Active.
Weitere Produktangebote SI3552DV-T1-GE3 nach Preis ab 0.33 EUR bis 1.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI3552DV-T1-GE3 | Hersteller : Vishay | Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R |
auf Bestellung 4885 Stücke: Lieferzeit 14-21 Tag (e) |
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Si3552DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 6-TSOP Part Status: Active |
auf Bestellung 2388 Stücke: Lieferzeit 21-28 Tag (e) |
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Si3552DV-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR |
auf Bestellung 48949 Stücke: Lieferzeit 14-28 Tag (e) |
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Si3552DV-T1-GE3 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3552DV-T1-GE3 | Hersteller : Vishay | Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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Si3552DV-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -30/30V; -1.8/2.5A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -7...8A Power dissipation: 1.15W Gate charge: 3.6/3.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -1.8/2.5A Kind of channel: enhanced Drain-source voltage: -30/30V Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 360/175mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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Si3552DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 6-TSOP Part Status: Active |
Produkt ist nicht verfügbar |
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Si3552DV-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -30/30V; -1.8/2.5A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -7...8A Power dissipation: 1.15W Gate charge: 3.6/3.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -1.8/2.5A Kind of channel: enhanced Drain-source voltage: -30/30V Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 360/175mΩ |
Produkt ist nicht verfügbar |