SI3590DV-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 14000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.67 EUR |
| 6000+ | 0.64 EUR |
| 9000+ | 0.59 EUR |
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Technische Details SI3590DV-T1-E3 Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A, Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active.
Weitere Produktangebote SI3590DV-T1-E3 nach Preis ab 0.7 EUR bis 1.77 EUR
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SI3590DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active |
auf Bestellung 14514 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3590DV-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR |
auf Bestellung 238616 Stücke: Lieferzeit 14-28 Tag (e) |
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| SI3590DV-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 3/-2A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3/-2A Pulsed drain current: 8A Power dissipation: 1.05W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 300/120mΩ Mounting: SMD Gate charge: 6/4.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3590DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3590DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3590DV-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 3/-2A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 3/-2A Pulsed drain current: 8A Power dissipation: 1.05W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 300/120mΩ Mounting: SMD Gate charge: 6/4.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |