SI3805DV-T1-GE3

SI3805DV-T1-GE3

SI3805DV-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET 20V 3.3A 1.4W 84mohm @ 10V
si3805dv-260485.pdf
verfügbar/auf Bestellung
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI3805DV-T1-GE3

Description: MOSFET P-CH 20V 3.3A 6-TSOP, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Supplier Device Package: 6-TSOP, Package / Case: SOT-23-6 Thin, TSOT-23-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), Drain to Source Voltage (Vdss): 20V, FET Feature: Schottky Diode (Isolated), FET Type: MOSFET P-Channel, Metal Oxide, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.4W.

Preis SI3805DV-T1-GE3 ab 0 EUR bis 0 EUR

SI3805DV-T1-GE3
SI3805DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
si3805dv.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3805DV-T1-GE3
SI3805DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
si3805dv.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3805DV-T1-GE3
SI3805DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
si3805dv.pdf
auf Bestellung 420 Stücke
Lieferzeit 21-28 Tag (e)