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SI3851DV-T1-E3 VISHAY


Hersteller: VISHAY
06PB
auf Bestellung 2990 Stücke:

Lieferzeit 21-28 Tag (e)
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Technische Details SI3851DV-T1-E3 VISHAY

Description: MOSFET P-CH 30V 1.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.8A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 830mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V.

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SI3851DV-T1-E3 Hersteller : VISHAY 09+
auf Bestellung 3008 Stücke:
Lieferzeit 21-28 Tag (e)
SI3851DV-T1-E3 SI3851DV-T1-E3 Hersteller : Vishay Siliconix Description: MOSFET P-CH 30V 1.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 830mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
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SI3851DV-T1-E3 SI3851DV-T1-E3 Hersteller : Vishay / Siliconix 70978-241026.pdf MOSFET 30V 1.8A 1.15W
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