SI3853DV-T1-E3
Hersteller: auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SI3853DV-T1-E3
Description: MOSFET P-CH 20V 1.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.8A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 830mW (Ta), Vgs(th) (Max) @ Id: 500mV @ 250µA (Min), Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V.
Weitere Produktangebote SI3853DV-T1-E3
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SI3853DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 1.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.8A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V |
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