auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3993CDV-T1-GE3 Vishay
Description: MOSFET 2P-CH 30V 2.9A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, Rds On (Max) @ Id, Vgs: 111mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 6-TSOP.
Weitere Produktangebote SI3993CDV-T1-GE3 nach Preis ab 0.23 EUR bis 1.25 EUR
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SI3993CDV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 2.9A 6-Pin TSOP T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3993CDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 2.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Rds On (Max) @ Id, Vgs: 111mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-TSOP |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3993CDV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 2.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Rds On (Max) @ Id, Vgs: 111mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-TSOP |
auf Bestellung 28982 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3993CDV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs TSOP-6 |
auf Bestellung 22279 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3993CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 2.6A 6-Pin TSOP T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3993CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 2.9A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3993CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 2.9A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3993CDV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 2.9A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3993CDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.6A; Idm: -8A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.6A Pulsed drain current: -8A Power dissipation: 0.9W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 111mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3993CDV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.6A; Idm: -8A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.6A Pulsed drain current: -8A Power dissipation: 0.9W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 111mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |