Technische Details SI4038DY-T1-GE3 Vishay
Description: MOSFET N-CH 40V 42.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V, Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V.
Weitere Produktangebote SI4038DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4038DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH Si 40V 42.5A 8-Pin SOIC N |
Produkt ist nicht verfügbar |
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| SI4038DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 42.5A; Idm: 150A Kind of package: reel; tape Mounting: SMD Power dissipation: 7.8W Polarisation: unipolar Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: SO8 Drain-source voltage: 40V Drain current: 42.5A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4038DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 42.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V |
Produkt ist nicht verfügbar |
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SI4038DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 42.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42.5A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4070 pF @ 20 V |
Produkt ist nicht verfügbar |
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SI4038DY-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 781-SI4154DY-GE3 |
Produkt ist nicht verfügbar |
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| SI4038DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 42.5A; Idm: 150A Kind of package: reel; tape Mounting: SMD Power dissipation: 7.8W Polarisation: unipolar Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Case: SO8 Drain-source voltage: 40V Drain current: 42.5A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |