SI4056DY-T1-GE3 Vishay Semiconductors
auf Bestellung 28033 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.1 EUR |
| 29+ | 1.81 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 1.02 EUR |
| 5000+ | 1 EUR |
| 10000+ | 0.95 EUR |
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Technische Details SI4056DY-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 100V 11.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V, Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V.
Weitere Produktangebote SI4056DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4056DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 11.1A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4056DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; Idm: 70A; 3.6W; SO8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 11.1A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Gate charge: 29.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke |
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SI4056DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 11.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V |
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SI4056DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 11.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V |
Produkt ist nicht verfügbar |
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SI4056DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; Idm: 70A; 3.6W; SO8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 11.1A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Gate charge: 29.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |