SI4058DY-T1-GE3 VISHAY
Hersteller: VISHAYDescription: VISHAY - SI4058DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 10.3 A, 0.0217 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Verlustleistung Pd: 5.6W
Gate-Source-Schwellenspannung, max.: 2.8V
euEccn: NLR
Verlustleistung: 5.6W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: ThunderFET
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0217ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0217ohm
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4058DY-T1-GE3 VISHAY
Description: Description: Description: MOSFET N-CH 100V 10.3A 8SOIC, Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Cut Tape (CT), Base Part Number: SI4058, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SOIC, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5.6W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 50V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id.
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auf Bestellung 633 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4058DY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4058DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 10.3 A, 0.0217 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 5.6W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0217ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4058DY-T1-GE3 Produktcode: 182910 |
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Si4058DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: Description: MOSFET N-CH 100V 10.3A 8SOIC Base Part Number: SI4058 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 50V Vgs (Max): ±20V Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA |
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Si4058DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: Description: Description: MOSFET N-CH 100V 10.3A 8SOIC Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI4058 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id |
Produkt ist nicht verfügbar |