SI4090DY-T1-GE3

SI4090DY-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 100V 19.7A 8-Pin SOIC N T/R
si4090dy.pdf si4090dy.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 649 Stücke
Lieferzeit 14-21 Tag (e)

73+ 2.25 EUR
86+ 1.84 EUR
92+ 1.66 EUR
118+ 1.24 EUR
250+ 1.18 EUR
500+ 0.98 EUR

Technische Details SI4090DY-T1-GE3

Description: MOSFET N-CH 100V 19.7A 8SO, Manufacturer: Vishay Siliconix, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Base Part Number: SI4090.

Preis SI4090DY-T1-GE3 ab 0.98 EUR bis 2.25 EUR

SI4090DY-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 100V 19.7A 8-Pin SOIC N T/R
si4090dy.pdf si4090dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4090DY-T1-GE3
SI4090DY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs SO-8
si4090dy-1764746.pdf
auf Bestellung 11899 Stücke
Lieferzeit 14-28 Tag (e)
SI4090DY-T1-GE3
SI4090DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 19.7A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
si4090dy.pdf
auf Bestellung 2819 Stücke
Lieferzeit 21-28 Tag (e)
SI4090DY-T1-GE3
SI4090DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 19.7A 8SO
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4090
si4090dy.pdf
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
SI4090DY-T1-GE3
SI4090DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 19.7A 8SO
Base Part Number: SI4090
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
si4090dy.pdf
auf Bestellung 2962 Stücke
Lieferzeit 21-28 Tag (e)