SI4114DY-T1-E3

SI4114DY-T1-E3

SI4114DY-T1-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V

si4114dy.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2194 Stücke
Lieferzeit 21-28 Tag (e)

6+ 4.39 EUR
10+ 3.96 EUR
100+ 3.18 EUR
500+ 2.62 EUR
1000+ 2.24 EUR

Technische Details SI4114DY-T1-E3

Description: MOSFET N-CH 20V 20A 8-SOIC, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V, Vgs (Max): ±16V, Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI4114DY-T1-E3 ab 2.24 EUR bis 4.39 EUR

SI4114DYT1E3
Hersteller:

32500 Stücke
SI4114DYT1E3
Hersteller: VISHAY

32500 Stücke
SI4114DY-T1-E3
Hersteller:
Si4114DY MOSFET N-CH 20V 20A 8-SOIC
si4114dy.pdf si4114dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4114DY-T1-E3
SI4114DY-T1-E3
Hersteller: Vishay / Siliconix
MOSFET 20V Vds 16V Vgs SO-8
si4114dy-1765034.pdf
auf Bestellung 4620 Stücke
Lieferzeit 14-28 Tag (e)
SI4114DY-T1-E3
SI4114DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si4114dy.pdf
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
SI4114DY-T1-E3
SI4114DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
si4114dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen