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SI4128DY-T1-GE3

SI4128DY-T1-GE3 Vishay Siliconix


si4128dy-old.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 2500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.55 EUR
Mindestbestellmenge: 2500
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Technische Details SI4128DY-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 10.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V, Power Dissipation (Max): 2.4W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V.

Weitere Produktangebote SI4128DY-T1-GE3 nach Preis ab 0.6 EUR bis 1.47 EUR

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SI4128DY-T1-GE3 SI4128DY-T1-GE3 Hersteller : Vishay Siliconix si4128dy-old.pdf Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 4058 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.26 EUR
100+ 0.87 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
SI4128DY-T1-GE3 SI4128DY-T1-GE3 Hersteller : Vishay Semiconductors si4128dy-old.pdf MOSFET 30V Vds 20V Vgs SO-8
auf Bestellung 37083 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
36+1.47 EUR
41+ 1.27 EUR
100+ 0.88 EUR
500+ 0.74 EUR
1000+ 0.63 EUR
2500+ 0.6 EUR
Mindestbestellmenge: 36
SI4128DY-T1-GE3 SI4128DY-T1-GE3 Hersteller : VISHAY VISH-S-A0002474608-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: VISHAY - SI4128DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 10.9 A, 0.02 ohm, SOIC, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 10.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.02ohm
auf Bestellung 3971 Stücke:
Lieferzeit 14-21 Tag (e)
SI4128DY-T1-GE3 SI4128DY-T1-GE3 Hersteller : VISHAY si4128dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.7A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SI4128DY-T1-GE3 SI4128DY-T1-GE3 Hersteller : VISHAY si4128dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.7A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar