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SI4134DY-T1-E3

SI4134DY-T1-E3 Vishay Siliconix

si4134dy.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.69 EUR
Mindestbestellmenge: 2500
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Technische Details SI4134DY-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 30V 14A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V.

Weitere Produktangebote SI4134DY-T1-E3 nach Preis ab 0.64 EUR bis 1.82 EUR

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SI4134DY-T1-E3 SI4134DY-T1-E3 Hersteller : Vishay Semiconductors si4134dy.pdf MOSFET 30V Vds 20V Vgs SO-8
auf Bestellung 67067 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.5 EUR
39+ 1.33 EUR
100+ 1.01 EUR
500+ 0.89 EUR
1000+ 0.78 EUR
2500+ 0.68 EUR
5000+ 0.64 EUR
Mindestbestellmenge: 35
SI4134DY-T1-E3 SI4134DY-T1-E3 Hersteller : Vishay Siliconix si4134dy.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 846 pF @ 15 V
auf Bestellung 4212 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.82 EUR
17+ 1.58 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
SI4134DY-T1-E3 Hersteller : VISHAY si4134dy.pdf 1027+ SOP8
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)