SI4134DY-T1-E3

SI4134DY-T1-E3

Hersteller: Vishay
Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R
si4134dy.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1268 Stücke
Lieferzeit 14-21 Tag (e)
383+ 0.43 EUR

Technische Details SI4134DY-T1-E3

Description: MOSFET N-CH 30V 14A 8-SOIC, Base Part Number: SI4134, Package / Case: 8-SOIC (0.154", 3.90mm Width), Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis SI4134DY-T1-E3 ab 0.43 EUR bis 0.43 EUR

SI4134DY-T1-E3
Hersteller:
VISHAY 1027+ SOP8
si4134dy.pdf
2500 Stücke
SI4134DY-T1-E3
Hersteller:

si4134dy.pdf
75000 Stücke
SI4134DY-T1-E3
Hersteller: VISHAY
1027+ SOP8
si4134dy.pdf
5000 Stücke
SI4134DY-T1-E3
SI4134DY-T1-E3
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs SO-8
si4134dy-1765284.pdf
auf Bestellung 1880 Stücke
Lieferzeit 14-28 Tag (e)
SI4134DY-T1-E3
Hersteller: Vishay
Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC N T/R
si4134dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4134DY-T1-E3
SI4134DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4134
si4134dy.pdf
auf Bestellung 673 Stücke
Lieferzeit 21-28 Tag (e)
SI4134DY-T1-E3
SI4134DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8-SOIC
Base Part Number: SI4134
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
si4134dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen