auf Bestellung 14229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.02 EUR |
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Technische Details SI4160DY-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 25.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V, Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V.
Weitere Produktangebote SI4160DY-T1-GE3 nach Preis ab 0.99 EUR bis 2.6 EUR
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SI4160DY-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 25.4A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V |
auf Bestellung 2494 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4160DY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4160DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 25.4 A, 0.004 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 25.4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 5.7W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.004ohm |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4160DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 25.4A 8-Pin SOIC N T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4160DY-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 1640 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4160DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 25.4A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4160DY-T1-GE3 | Hersteller : VISHAY |
SI4160DY-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SI4160DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 25.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V |
Produkt ist nicht verfügbar |