SI4160DY-T1-GE3
SI4160DY-T1-GE3
Hersteller:
Informationen zu Lagerverfügbarkeit und Lieferzeiten
4376 Stücke
4376 Stücke
Technische Details SI4160DY-T1-GE3
Description: MOSFET N-CH 30V 25.4A 8-SOIC, Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Base Part Number: SI4160.
Preis SI4160DY-T1-GE3 ab 0 EUR bis 0 EUR
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SI4160DY-T1-GE3 Hersteller: Vishay
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1640 Stücke |
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 Hersteller: Vishay Semiconductors MOSFET 30V Vds 20V Vgs SO-8
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auf Bestellung 4278 Stücke  Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 25.4A 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.7W Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)
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auf Bestellung 541 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 25.4A 8-SOIC Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4160
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 25.4A 8-SOIC Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4160
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auf Bestellung 892 Stücke Lieferzeit 21-28 Tag (e) |
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