SI4160DY-T1-GE3

SI4160DY-T1-GE3

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si4160dy.pdf
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Technische Details SI4160DY-T1-GE3

Description: MOSFET N-CH 30V 25.4A 8-SOIC, Supplier Device Package: 8-SO, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Base Part Number: SI4160.

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SI4160DY-T1-GE3
Hersteller: Vishay

si4160dy.pdf
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SI4160DY-T1-GE3
SI4160DY-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs SO-8
si4160dy-1765154.pdf
auf Bestellung 4278 Stücke
Lieferzeit 14-28 Tag (e)
SI4160DY-T1-GE3
SI4160DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25.4A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
si4160dy.pdf
auf Bestellung 541 Stücke
Lieferzeit 21-28 Tag (e)
SI4160DY-T1-GE3
SI4160DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25.4A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4160
si4160dy.pdf
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SI4160DY-T1-GE3
SI4160DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25.4A 8-SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2071pF @ 15V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4160
si4160dy.pdf
auf Bestellung 892 Stücke
Lieferzeit 21-28 Tag (e)