auf Bestellung 2405 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 185+ | 0.85 EUR |
| 187+ | 0.82 EUR |
| 189+ | 0.78 EUR |
| 196+ | 0.72 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4166DY-T1-GE3 Vishay
Description: MOSFET N-CH 30V 30.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V, Power Dissipation (Max): 3W (Ta), 6.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V.
Weitere Produktangebote SI4166DY-T1-GE3 nach Preis ab 0.59 EUR bis 3.46 EUR
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SI4166DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R |
auf Bestellung 2405 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4166DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs SO-8 |
auf Bestellung 3789 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4166DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 30.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V |
auf Bestellung 437 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4166DY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4166DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 30.5 A, 0.0032 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 30.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 6.5W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0032ohm |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 2165 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4166DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4166DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.5A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30.5A Pulsed drain current: 70A Power dissipation: 6.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4166DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 30.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30.5A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SI4166DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.5A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30.5A Pulsed drain current: 70A Power dissipation: 6.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |