SI4190DY-T1-GE3

SI4190DY-T1-GE3

SI4190DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide

si4190dy.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details SI4190DY-T1-GE3

Description: MOSFET N-CH 100V 20A 8-SOIC, Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Drain to Source Voltage (Vdss): 100V, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: 8-SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 7.8W, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V, Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA.

Preis SI4190DY-T1-GE3 ab 0 EUR bis 0 EUR

SI4190DY-T1-GE3
SI4190DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 20A 8-SOIC
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
si4190dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4190DY-T1-GE3
SI4190DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 20A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
si4190dy.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen