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SI4190DY-T1-GE3

SI4190DY-T1-GE3 Vishay


si4190dy.pdf Hersteller: Vishay
Trans MOSFET N-CH 100V 20A 8-Pin SOIC N T/R
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Technische Details SI4190DY-T1-GE3 Vishay

Description: MOSFET N-CH 100V 20A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V.

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SI4190DY-T1-GE3 SI4190DY-T1-GE3 Hersteller : Vishay Siliconix si4190dy.pdf Description: MOSFET N-CH 100V 20A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Produkt ist nicht verfügbar