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Si4214DDY-T1-E3

Si4214DDY-T1-E3 Vishay Semiconductors


si4214ddy-t1-e3.pdf Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs SO-8
auf Bestellung 18587 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.23 EUR
27+ 1.93 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.95 EUR
2500+ 0.82 EUR
5000+ 0.8 EUR
Mindestbestellmenge: 24
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Technische Details Si4214DDY-T1-E3 Vishay Semiconductors

Description: MOSFET 2N-CH 30V 8.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.5A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.

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Si4214DDY-T1-E3 si4214ddy-t1-e3.pdf
auf Bestellung 8200 Stücke:
Lieferzeit 21-28 Tag (e)
SI4214DDY-T1-E3 SI4214DDY-T1-E3 Hersteller : Vishay si4214ddy.pdf Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
Si4214DDY-T1-E3 Hersteller : VISHAY si4214ddy-t1-e3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Si4214DDY-T1-E3 Si4214DDY-T1-E3 Hersteller : Vishay Siliconix si4214ddy-t1-e3.pdf Description: MOSFET 2N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Si4214DDY-T1-E3 Si4214DDY-T1-E3 Hersteller : Vishay Siliconix si4214ddy-t1-e3.pdf Description: MOSFET 2N-CH 30V 8.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
Si4214DDY-T1-E3 Hersteller : VISHAY si4214ddy-t1-e3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8.5A; Idm: 30A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.5A
Pulsed drain current: 30A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar